発表論文
2004
H. Kinoshita, T. Haga, K. Hamamoto, S. Takada, N. Kazui, S. Kakunai, H.
Tsubakino, T. Shoki, M. Endo and T. Watanabe
Actinic mask metrology for extreme ultraviolet lithography
J. Vac. Sci. Technol. B22(1) (2004) 264-267
2003
T. Haga, H. Kinoshita, K. Hamamoto, S. Takada, N. Kazui, S. Kakunai, H.
Tsubakino and T. Watanabe
Evaluation of Finishied EUVL Mask using a Mirau Intergerometric Microscope
Jpn. J. Appl. Phys. 42 (2003) 3771-3775
K. Hamamoto, S. Takada, T. Watanabe, N. Sakaya, T. Shoki, M. Hosoya and H.
Kinoshita
Investigation of Contamination Removal from Finished EUVL Mask
J. Photopolym. Sci. Technol. 16, 3 (2003) 395-400
2002
木下博雄，渡邊健夫，浜本和宏，椿野晴繁
極端紫外線露光技術
材料 51, 9 (2002) 999-1004
極紫外リソグラフィー
木下博雄，渡邊健夫，浜本和宏
光学 31, 7 (2002) 524-531
K. Hamamoto, T. Watanabe, H. Hada, H. Komano and H. Kinoshita
Characteristics of Chemically Amplified Resist in EUV Lithography
J. Photopolym. Sci. Technol. 15, 3 (2002) 361-366
T.Watanabe, H. Kinoshita, K. Hamamoto, M. Hosoya, T. Shoki, H. Hada, H. Komano
and S. Okazaki
Fine Pattern Replication Using ETS-1 Three-Aspherical Mirror Imaging System
Jpn. J. Appl. Phys. 41 (2002) 4105-4110
2001
T. Watanabe, H. Kinoshita, H. Nii, K. Hamamoto, H. Hada, H. Komano and S. Irie
Photo-induced oitgassing from the resist for extreme ultraviolet lithography by
the quardruple mass spectrometer
J. Vac. Sci. Technol. B19(3) (2001) 736-742
T. Watanabe, K.
Hamamoto, H. Kinoshita, H. Tsubakino, H, Hada, H. Komano, M. Endo and M Sasago
Resist Outgassing by EUV Irradation
J. Photopolym. Sci. Technol. 14, 4 (2001) 555-560.
K. Hamamoto, T.
Watanabe, H. Tsubakino, H. Kinoshita, T. Shoki and M. Hosoya
Fine Pattern Replication by EUV Lithography
J. Photopolym. Sci. Technol. 14, 4 (2001) 567-572
H. Nii, H. Kinoshita, T. Watanabe, K. Hamamoto, H. Tsubakino and Y. Sugie
Performance of Cr mask for extreme Ultraviolet lithography
Proc. SPIE 4409 (2001) 681-686
H. Nii, H. Kinoshita, T. Watanabe, et al
Studies on EUV mask cleaning by dry and wet processes
Proc. SPIE 4409 (2001) 687-694
2000
H. Kinoshita and T. Watanabe
Experimental Results Obrained using EUV Laboratory Tool at NewSUBARU
Jpn. J. Appl. Phys. 39 (2000) 6771-6776
M. Niibe, T. Watanabe, H. Nii, T. Tanaka and H. Kinoshita
Contrast measurement of Reflection mask for Cr and Ta absorber for EUVL
Jpn. J. Appl. Phys. 39 (2000) 6815-6818
T. Watanabe, H. Kinoshita, H. Nii, Y. Li, et al
Development of the large field camera
J. Vac.Sci., Technol. B18(6) (2000) 2905-2910
H. Kinoshita, T. Watanabe
Current states of EUV lithography
J. Photopolm. Sci. Technol. 13, 3 (2000) 379-384
S. Irie, S. Shirayone, S. Mori, H. Oizume, H. Matuzawa, E. Yano, S. Okazaki, T.
Watanabe and H. Kinoshita
Development of Resist materials for EUVL
J. Photopolym. Sci. Technol. 13, 3 (2000) 385-389
H. Kinoshita, T. Watanabe, Y.Li, et al
Recent advances of three-aspherical-mirror System for EUVL
Proc. SPIE 3997, (2000) 70-75
T. Watanabe, H. Kinoshita, A. Miyafuji, S. Irie, et al
Lithography performance and Optimization of chemically amplified single-layer
resist for EUV lithography
Proc. SPIE 3997, (2000) 600-607
K. Sugisaki, T. Oshino, K. Murakami, T. Watanabe, H. Kinoshita, et al
Assembly and alignment of three-aspherical-mirror optics for extreme
ultraviolet prijection lithography
Proc. SPIE 3997, (2000) 751-758
Y. Li, T. Watanabe, H. Kinoshita
Design of EUVL camera with large numerical aperture
Proc. SPIE 3997, (2000) 759-764
S. Irie, T. Watanabe, H. Kinoshita, et al
Development for the alignment procedure of three-aspherical-mirror optics
Proc. SPIE 3997, (2000) 759-764
Y. Li, T. Watanabe and H. Kinoshita
An illumination system design for a three-aspherical mirror projection cdamera
of extreme ultraviolet lithography
J. Applied Optics, 39-90 (2000) 3253
学会発表等
2004
渡邊健夫，木下博雄，浜本和宏，田中弓弦，赤松大輔，酒屋典之，細谷守男，笑喜勉
極端紫外線顕微鏡を用いた極端紫外線リソグラフィ用マスク評価
第51回応用物理学関係連合講演会 2004.3.29
浜本和宏，渡邊健夫，木下博雄，酒屋典之，笑喜勉，細谷守男，菅原寛，菱沼宣是
真空雰囲気での172nm光源によるEUVL用マスクのコンタミネーション除去
第51回応用物理学関係連合講演会 2004.3.29
渡邊健夫，木下博雄，渡邊健夫，浜本和宏，数井直樹
EUVL用レジストのアウトガスの低減
第51回応用物理学関係連合講演会 2004.3.28
2003
T. Watanabe
2003 International Microprocesses and Nanotechnology Conference
K. Hamamoto, T. Watanabe, N. Sakaya, M. Hosoya, T. Shoki, H. Hada, N.
Hishinuma, H. Sugahara and H. Kinoshita
Cleaning of EUVL masks and optics using 172-nm and 13.5-nm radiation
2003 International
Microprocesses and Nanotechnology Conference
H. Kinoshita, T. Watanabe, K. Hamamoto, S. Kakunai and T. Shoki
Actinic mask metrology for EUV lithography
Second International Extreme
Ultraviolet Lithography Symposium
T. Watanabe, K. Hamamoto, H. Kinoshita, H. Hada and H. Komano
Resist Characteristics in EUVL
Second International Extreme
Ultraviolet Lithography Symposium
K. Hamamoto, T. Watanabe, N. Sakaya, T. Shoki, M. Hosoya, N. Hishinuma, H.
Sugahara and H. Kinoshita
Investigation of contamination removal from EUVL mask
Second International Extreme
Ultraviolet Lithography Symposium
木下博雄，浜本和宏，渡邊健夫，酒屋典之，細谷守男，笑喜勉，菅原寛，菱沼宣是
172nm光源を用いたEUVL用マスクのコンタミネーション除去の提案
第64回応用物理学関係連合講演会
H. Kinoshita
Present Status and Future Prospects of EUV Lithography
ICPXXI
T. Watanabe
ICPXXI
K. Hamamoto, T. Watanabe, N. Sakaya, T. Shoki, M. Hosoya, N. Hishinuma, H.
Sugahara and H. Kinoshita
Investigation of contamination removal from EUVL masks
ICPXXI
K. Hamamoto, S. Takada, T. Watanabe, N. Sakaya, T. Shoki, M. Hosoya and H.
Kinoshita
Investigation of Contamination Removal from Finished EUVL Mask
20th Conference of Photopolymer science and Technology
高田慎太郎，木下博雄，渡邊健夫，浜本和宏，数井直樹
酸素雰囲気中でのコンタミネーション除去の検討
第50回応用物理学関係連合講演会 2003.3.28
浜本和宏，芳賀恒之，高田慎太郎，数井直樹，渡邊健夫，格内
敏，椿野晴繁，遠藤政孝，笹子 勝，酒屋典之，細谷守男，笑喜 勉，木下博雄
EUV顕微鏡を用いたEUVL用マスクの評価(2)
第50回応用物理学関係連合講演会 2003.3.28
数井直樹，渡邊健夫，木下博雄，浜本和宏，高田慎太郎，格内敏
EUV位相差顕微鏡の開発
第16回日本放射光学会年会 2003.1.11
高田慎太郎，芳賀恒之，浜本和宏，木下博雄，渡邊健夫，数井直樹，椿野晴繁
EUV顕微鏡によるEUVマスクの観察
第16回日本放射光学会年会 2003.1.11
浜本和宏，渡邊健夫，木下博雄，高田慎太郎，椿野晴繁
極端紫外線リソグラフィーによる大面積露光
第16回日本放射光学会年会 2003.1.11
2002
H. Kinoshita, T. Haga*,
K. Hamamoto, S. Takada, N. Kazui, S. Kakunai, H. Tsubakino and T. Watanabe
Evaluation of Finished EUVL Masks using a EUV Microscope
International Symposium on Technologies and Applications of Photoelectron
Micro-Spectroscopy with Laser-based VUV sources 2002.12.2
浜本和宏，渡邊健夫，木下博雄，椿野晴繁
極端紫外線リソグラフィーによる大面積露光
第131回日本金属学会2002年秋期大会 2002.11.3
H.Kinoshita, T.Haga, K.
Hamamoto, S. Takada, N. Kazui, S. Kakunai, H. Tubakino and T. Watanabe
Evaluation of Finishied EUVL Mask using a Mirau Intergerometric Microscope
First International Extreme Ultraviolet Lithography Symposium 2002.10.15
浜本和宏，芳賀恒之，高田慎太郎，数井直樹，渡邊健夫，格内敏，椿野晴繁，木下博雄
EUV顕微鏡を用いたEUVL用マスクの評価
第63回応用物理学関係連合講演会 2002.9.27
木下博雄
次世代リソグラフィ（EUVL）用高精度反射鏡
第49回応用物理学関係連合講演会 シンポジウム 光設計の最前線 2002.3.29
浜本和宏，渡邊健夫，木下博雄，岡崎信次
EUVリソグラフィーによる大面積露光
第49回応用物理学関係連合講演会 2002.3.29
浜本和宏，渡邊健夫，木下博雄，羽田英夫，駒野博司
EUV照射によるレジストの脱ガス評価
第49回応用物理学関係連合講演会 2002.3.28