EQUIPMENT SYSTEM

   RF & DC SUPPATTERING SYSTEM.
     for mulilayer sputtering for EUV
    Now, 66% or more of inflectance has been obtained with the 4 inches wafer.

     

  ELECTRON  LITHOGRAPHY SYSTEM EQUIPMENT (Elionix, ELS-3700)
     for making thin films for EUV maltilayer..
    Patterning of Zone Plate or EUVL mask is advanced until now.

     

   RESIST  COATER  AND  DEVELOPMENT SYSTEM (Tokyo Electron, Clean Track Mark-8)
     for using of resist coater and development (for 8 inches wafer)     

  DRY ETCHING SYSTEM. (Lam) (Lam Research, TCP 9400 SE Alliance(A6))
     for using to dry etching system.

     

   SCANNING ELECTRON MICROSCOPE(Hitachi, S-4500)
     for obsevation exposed pattern

     

   ATOMIC FORCE MICROSCOPE (Veeco, NanoScope III)
     for mesurement surface roughness of multilayer

     

   INTERFEROMETER  (ZYGO GPI XP)
     for adjustment optics and form evaluation of optical elements

     

   NON-COTACT FILM THICKNESS MEASUREMENT SYSTEM (Nano metrics, NanoSpec 6100)
     for measurement of the thickness of thin film on resist etc

     

   STYLUS  GAUSE        (Dektak3T) (Sloan, Dektak3 ST)

     

   FT  -  IR  (Parkin  Elmer, Spectrum One)