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Now you areFTop page >> Optical application advanced technology course >> Radiation
light nano engineering |
Field of Radiation light nano engineering (Japanese)
Prof. Hiroo Kinoshita Papers
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Outline |
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In radiation light nano engineering field, we advance research and developement of Extreme UltraViolet Lithography
at New SUBARU synchrotron radiation (SR) facility.We proceed comprehensively the research such as development of system,
multilayer mask, resist material and so on. Since 2002, it had adopted
for the research of CREST, we advance development mainly in extreme ultraviolet
phase microscope. we try to establish the technology which is available
beam splitter in EUV ground, using this, we develop phase interference
microscope. This gives, that can be possible to estimate fine defectithe
phase defect effected by asperity on the multilayer surface and foreign
material in the multilayer) on the mask of Extreme Ultra Violet Lithography (EUVL) for next-generation semiconductor manufacturing, and also we set as our
goal, to contribute in developing of semiconductor device of ultra micro
line thickness i50nm`35nm) that will be needed in 2007 or late, to work
for general-purpose measuring instrument by picoorder using radiation light. |
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Observation and measurement of functional material surface |
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For realization of UltraViolet Lithography, to make multilayer reflective mask to zero defects
remained as a technical issue,it needed to examine rapidly the defect which has 30nm size until it come
into practical use in 2007. Therefore we advance the development of the
phase extreme UltraViolet microscope as a tool which can observe phase
defect resulting from multilayer film and intensity defect of mask .
The purpose is to develop the one which can gain X-ray stereoimage which
has magnification6000, resolution of lateral direction 20nm, heightwise 0.03 nm, herewith, advance the analysis multilayer surface and interface, and clear up the method for make mask to zero defects.The purpose is advancing the analysis multilayer surface and interface by developping the one which can gain X-ray stereoimage of magnification6000, resolution of lateral direction 20nm, and heightwise 0.03nm, and clearing up the method for make mask to zero defects. |
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Development and estimation of photolithography machine of EUVL |
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Since 1984, the work has been proceeding with Extreme UltraViolet Lithography(EUVL).Below is a system which has beeing advancing as a joint research between
Central Research Laboratory and Nikon since 1996, and since 1998.oct, it
has beeing advanced the development as a joint research with ASET.In the
autumn 1999 it was succeeded in pattern transcription of 56nm in minimum
line width. Also, in 2001, we succeeded in large area exposure with 60nm
in minimum line widthwithin the area of 10mm~10mm. |
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Development of digital imaging resist for nano device |
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In the future information-technology industry, the development of low driving
electrical power of less than 1V, and electronic device which can possess
higher speed at dozens of GHz is possessed. In 2009, it is predetermined
that the commercial production of device with line thickness of 32nm grade.
Extreme UltraViolet Lithography technology is the most expected. The development of EUV resist with resolution
of 20 nm, sensitivity of less than 2mJ/cm2, line width variability of less than 2nm, a law outgassing characteristics, is advanced.The line width of less than dozens nm is comparable to several molecule, because of that, the line width control which is proper for a molecule will be challenge. Therefore it is necessary that the reaction proceed for one light with high efficiency, and developping of digital imaging resist (DIR) in which the reaction prodeed by self-organization only in irradiated area. Especially, in quantum device which require the line width of less than 10nm, the digital imaging resist(DIR) is availableness. |
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Forming a multilayer and estimation |
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In the future information-technology industry, the development of low driving
electrical power of less than 1V, and electronic device which can possess
higher speed at dozens of GHz is possessed. In 2009, it is predetermined
that the commercial production of device with line thickness of 32nm grade.
Extreme UltraViolet Lithography technology is the most expected. The development of EUV resist with resolution
of 20 nm, sensitivity of less than 2mJ/cm2, line width variability of less than 2nm, a law outgassing characteristics, is advanced.The line width of less than dozens nm is comparable to several molecule, because of that, the line width control which is proper for a molecule will be challenge. Therefore it is necessary that the reaction proceed for one light with high efficiency, and developping of digital imaging resist (DIR) in which the reaction prodeed by self-organization only in irradiated area. Especially, in quantum device which require the line width of less than 10nm, the digital imaging resist(DIR) is availableness. |
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The measurement of multilayer reflectivity is carried out at the BL3 beamline of New SUBARU synchrotron radiation (SR)
facility. The reflectivity is obtained more than 60 % in iincident directly by Mo/Si multilayer. |
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Reduction of contamination |
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Extreme UltraViolet Lithography is carried in vacuum, however,as the exposure
is carried, the contamination (mainly carbon) adhere to optical system
and mask of exposure system. The contamination depress the optical system reflectivity and throughput of exposure. As a factor of this contamination adherence, it is considered the gus from the system, the outgussing occured from resist during exposure.
In this laboratory, for the issue of contamination...
(1)to reduce the outguss occured from resist and system which is the source
of contamination.
(2)to remove the contamination adhering to contamination.
on the subject of (2), we suggest method to remove by running the oxygen
into the vacuum chamber during exposure, and method to use the 172nm light
from Xe excimer lamp as a method of removing the contamination effectively.
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@University of Hyogo
Laboratory of Advanced Science and Technology for Industry |
@§678-1205
@3-1-2 Kouto, Kamigoori-cho, Ako-gun, Hyogo 678-1205, Japan |
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Contact |
TEL:0791-58-0249 |
FAX:0791-58-0242 |
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