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Field of Radiation light nano engineering (Japanese)

Prof. Hiroo Kinoshita Papers

Outline
In radiation light nano engineering field, we advance research and developement of Extreme UltraViolet Lithography at New SUBARU synchrotron radiation (SR) facility.We proceed comprehensively the research such as development of system, multilayer mask, resist material and so on. Since 2002, it had adopted for the research of CREST, we advance development mainly in extreme ultraviolet phase microscope. we try to establish the technology which is available beam splitter in EUV ground, using this, we develop phase interference microscope. This gives, that can be possible to estimate fine defectithe phase defect effected by asperity on the multilayer surface and foreign material in the multilayer) on the mask of Extreme Ultra Violet Lithography (EUVL) for next-generation semiconductor manufacturing, and also we set as our goal, to contribute in developing of semiconductor device of ultra micro line thickness i50nm`35nm) that will be needed in 2007 or late, to work for general-purpose measuring instrument by picoorder using radiation light.

Observation and measurement of functional material surface
For realization of UltraViolet Lithography, to make multilayer reflective mask to zero defects remained as a technical issue,it needed to examine rapidly the defect which has 30nm size until it come into practical use in 2007. Therefore we advance the development of the phase extreme UltraViolet microscope as a tool which can observe phase defect resulting from multilayer film and intensity defect of mask .
The purpose is to develop the one which can gain X-ray stereoimage which has magnification
6000, resolution of lateral direction 20nm, heightwise 0.03 nm, herewith, advance the analysis multilayer surface and interface, and clear up the method for make mask to zero defects.The purpose is advancing the analysis multilayer surface and interface by developping the one which can gain X-ray stereoimage of magnification6000, resolution of lateral direction 20nm, and heightwise 0.03nm, and clearing up the method for make mask to zero defects.

Development and estimation of photolithography machine of EUVL
Since 1984, the work has been proceeding with Extreme UltraViolet Lithography(EUVL).Below is a system which has beeing advancing as a joint research between Central Research Laboratory and Nikon since 1996, and since 1998.oct, it has beeing advanced the development as a joint research with ASET.In the autumn 1999 it was succeeded in pattern transcription of 56nm in minimum line width. Also, in 2001, we succeeded in large area exposure with 60nm in minimum line widthwithin the area of 10mm~10mm.

Development of digital imaging resist for nano device
In the future information-technology industry, the development of low driving electrical power of less than 1V, and electronic device which can possess higher speed at dozens of GHz is possessed. In 2009, it is predetermined that the commercial production of device with line thickness of 32nm grade. Extreme UltraViolet Lithography technology is the most expected. The development of EUV resist with resolution of 20 nm, sensitivity of less than 2mJ/cm2, line width variability of less than 2nm, a law outgassing characteristics, is advanced.The line width of less than dozens nm is comparable to several molecule, because of that, the line width control which is proper for a molecule will be challenge. Therefore it is necessary that the reaction proceed for one light with high efficiency, and developping of digital imaging resist (DIR) in which the reaction prodeed by self-organization only in irradiated area. Especially, in quantum device which require the line width of less than 10nm, the digital imaging resist(DIR) is availableness.

Forming a multilayer and estimation
In the future information-technology industry, the development of low driving electrical power of less than 1V, and electronic device which can possess higher speed at dozens of GHz is possessed. In 2009, it is predetermined that the commercial production of device with line thickness of 32nm grade. Extreme UltraViolet Lithography technology is the most expected. The development of EUV resist with resolution of 20 nm, sensitivity of less than 2mJ/cm2, line width variability of less than 2nm, a law outgassing characteristics, is advanced.The line width of less than dozens nm is comparable to several molecule, because of that, the line width control which is proper for a molecule will be challenge. Therefore it is necessary that the reaction proceed for one light with high efficiency, and developping of digital imaging resist (DIR) in which the reaction prodeed by self-organization only in irradiated area. Especially, in quantum device which require the line width of less than 10nm, the digital imaging resist(DIR) is availableness.
The measurement of multilayer reflectivity is carried out at the BL3 beamline of New SUBARU synchrotron radiation (SR) facility. The reflectivity is obtained more than 60 % in iincident directly by Mo/Si multilayer.

Reduction of contamination
Extreme UltraViolet Lithography is carried in vacuum, however,as the exposure is carried, the contamination (mainly carbon) adhere to optical system and mask of exposure system. The contamination depress the optical system reflectivity and throughput of exposure. As a factor of this contamination adherence, it is considered the gus from the system, the outgussing occured from resist during exposure.
In this laboratory, for the issue of contamination...
(1)to reduce the outguss occured from resist and system which is the source of contamination.
(2)to remove the contamination adhering to contamination.
on the subject of (2), we suggest method to remove by running the oxygen into the vacuum chamber during exposure, and method to use the 172nm light from Xe excimer lamp as a method of removing the contamination effectively.

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