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Extreme Ultra Violet Lithography

Extreme ultraviolet lithographic is the most promising technology to be use in high volume manufacturing from 32 nm node around 2013.
The technology issues in EUVL are:
1) achievement of the defect free EUV mask
2) development of the EUV light source with high power and high stability
3) development of the EUV resist with high sensitivity and low line edge roughness (LWR).

We developed the extreme ultraviolet microscope (EUVM), and succeeded to observe phase defects which are the defects inside the Mo/Si multilayer used for reflection mask utilizing this tool.

On the other hand, concerning of EUV resist development, up to now, PAG bounded polymer resist were developed for EUV and electron beam. This resist has high sensitivity and low LWR. In addition, EUV interference lithographic tool is developing for the evaluation of EUV resist for 20 nm and beyond. Utilizing the EUV-IL, 15 nm line and space pattern is succeeded to achieve.

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